inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRFS640A features avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current : 10 a (max.) @ vds = 200v description designed for use in switch mode power supplies and general purpose applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter value unit v dss drain-source voltage 200 v v gs gate-source voltage-continuous 30 v i d drain current-continuous 9.8 a i dm drain current-single pluse 72 a p d total dissipation @t c =25 43 w t j max. operating junction temperature -55~150 t stg storage temperature -55~150 symbol parameter max unit r th j-c thermal resistance, junction to case 2.89 /w r th j-a thermal resistance, junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRFS640A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 200 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 4.9a 0.18 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 200v; v gs = 0 v ds = 160v; v gs = 0; t j = 125 10 100 a v sd forward on-voltage i s = 9.8a; v gs = 0 1.5 v pdf pdffactory pro www.fineprint.cn
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